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nanoporous Ta2O5-x-based memory device

Based on

1 Articles
2015 Most recent source

Composition

1

Si/SiO2 substrate

Type Complex Compound
Formula
Role substrate
2

platinum

Type Single Compound
Formula Pt
Role electrodes
3

tantalum/nanoporous tantalum oxide film

Ta/NP Ta2O5-x film
Type
Formula
Role
4

platinum

Type Single Compound
Formula Pt
Role auxiliary electrode
5

multilayer epitaxial graphene

multilayer graphene few-layer graphene graphene MLG MEG
Type Nano Material
Formula
Role Schottky gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • Si/SiO2 substrate
  • platinum
Product

nanoporous Ta2O5-x-based memory device

Size: not specified

Medium/Support: none

References

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