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Hall-bar field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
3

graphene doped with nitrogen

nitrogen-doped graphene
Type Nano Material
Formula
Role channels
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain
6

titanium

Type Single Compound
Formula Ti
Role adhesion layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electrical resistance

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

Hall-bar field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
Product

Hall-bar field-effect transistor

Size: not specified

Medium/Support: none

References

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