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MoS2-based vertical metal-insulator-semiconductor-metal capacitor

Based on

1 Articles
2015 Most recent source

Composition

1

p-Si/SiO2

Type Complex Compound
Formula
Role substrate
2

titanium/gold thin film

titanium/gold film Ti/Au film
Type Nano Material
Formula
Role gate
3

hexagonal-boron nitride nanosheets

few layer boron nitride nanosheets hexagonal-boron nitride nanosheets hexagonal boron nitride monolayer monolayer hexagonal boron nitride few layer hexagonal boron nitride hexagonal boron nitride flakes boron nitride nanosheets hexagonal boron nitride monolayer h-BN sheets single-layer h-BN thin h-BN layers h-BN nanoflakes h-BN nanosheets hBN nanosheets h-BN monolayer monolayer h-BN hBN monolayers BN nanosheets monolayer hBN h-BN flakes h-BN layers h-BN NS hBN NS BN NS FBNNS h-BN BNNS hBN
Type Nano Material
Formula
Role gate dielectrics
4

molybdenum sulfide nanosheets

Type Nano Material
Formula
Role semiconductor layer
5

chromium

Type Single Compound
Formula Cr
Role adhesion layer
6

gold

Type Single Compound
Formula Au
Role top electrode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
capacitance dependent on frequency

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Applications

Area Application Nanomaterial Variant Source
energy storage

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
Product

MoS2-based vertical metal-insulator-semiconductor-metal capacitor

Size: not specified

Medium/Support: none

References

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