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FinFET

Based on

1 Articles
2015 Most recent source

Composition

1

p-type silicon

Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

silicon nanowires

silicon NW Si NW SiNW
Type
Formula
Role
4

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role gate dielectrics

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
amplification gain

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Applications

Area Application Nanomaterial Variant Source
sensors (excluding biosensors)

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • p-type silicon
  1. Dgw1SAycYLx2t53VZYyASMyBAKC0mx558EIEtRD8yBhXOGRQGbltBfZeeZr4hfPa84QpiXkfHF4Qzn4fJ0g3clL8iAQcL6SG8EGcIGD
Product

FinFET

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • p-type silicon
  1. 1EjLXI6OWJzWXqPUj6wBTxn9bnD227yTYuPc39TETbNdrPnchXOb1wtdsszG6X6L6xakUsqmsMXJ0nA7Uh2FuLKr05nE6kq53zFa57t
Product

FinFET

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • p-type silicon
  1. MDkFks2YiQd3Xjgup3gLoEc1KVbCztRiwsm7If17A02ebVySClse2LwBaOTdQhK7CfbCMsXbL9pSIwQjEuqMhjyUJT5njuHo9871kqp
Product

FinFET

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • p-type silicon
  1. TpHQpcYCrFtLmHUxDeoHkfx0LzE7rORbBMyW9bs0uZYOHwPfqQonWCLljl36Gkx1uDbmxz0gcdjBS8Lqk1adIqxpyem15UFzozhSCWa
Product

FinFET

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • p-type silicon
  1. Muv6Eip0xqW8vqloI31eEgx9zMk1P9kB3YtCWamAW8eq55g8e0vJvSlrmGYVudTkWjkHHLDS1nypdxpQtaiF9l4whsy5jrutZjBEbYW
Product

FinFET

Size: not specified

Medium/Support: none

References

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