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indium zinc barium oxide-based thin film transistor

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

zinc, strontium-doped indium oxide

indium strontium zinc oxide ISZO
Type Nano Material
Formula
Role channel layer
4

tungsten

Type Single Compound
Formula W
Role drain
5

tungsten

Type Single Compound
Formula W
Role source

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • zinc bis-methoxyethoxide
  • indium isopropoxide cluster
  1. TabqXszpQkVkYkojQ
Product

indium zinc barium oxide-based thin film transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • zinc alkoxide
  • indium methoxyisopropoxide cluster
  1. cmEXHWajrbkRtb9oQ
Product

indium zinc barium oxide-based thin film transistor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • zinc alkoxide
  • indium alkoxide
  1. 3lPQcP3FwHBqjMuJZ
Product

indium zinc barium oxide-based thin film transistor

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • zinc alkoxide
  • indium alkoxide
  1. iRHf66dBpOvF7Qa7J
Product

indium zinc barium oxide-based thin film transistor

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • zinc bis-methoxyethoxide
  • indium isopropoxide cluster
  1. bnupkGR7N1izlh9o0
Product

indium zinc barium oxide-based thin film transistor

Size: not specified

Medium/Support: none

References

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