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high-density horizontally aligned single-walled carbon nanotube array-based top-gated field effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

high-density horizontally aligned single-walled carbon nanotube arrays

high-density horizontally aligned SWNT arrays on sapphire substrate
Type Nano Material
Formula
Role channels
2

hafnia/titanium stack

Type Nano Material
Formula
Role U-shaped top-gate stack
3

titanium/palladium/gold stack

Type Nano Material
Formula
Role gate
4

titanium/palladium/gold stack

Type Nano Material
Formula
Role drain
5

titanium/palladium/gold stack

Type Nano Material
Formula
Role source
6

sapphire

Type Single Compound
Formula Al2O3
Role substrate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current gain

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Product

high-density horizontally aligned single-walled carbon nanotube array-based top-gated field effect transistor

Size: not specified

Medium/Support: none

References

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