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PEO:CsClO4 solid polymer electrolyte-gated 2H-MoTe2 field-effect transistor (FET)

Based on

1 Articles
2015 Most recent source

Composition

1

B-doped Si

p-Si
Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

2H-MoTe2 film

Type
Formula
Role
4

titanium

Type
Formula Ti
Role
5

palladium

Type Single Compound
Formula Pd
Role source
6

palladium

Type Single Compound
Formula Pd
Role drain
7

PEO:CsClO4 solid polymer electrolyte

Type Complex Compound
Formula
Role electrolytes
8

palladium

Type Single Compound
Formula Pd
Role upper gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band gap

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • molybdenum(IV) telluride
  • B-doped Si
Product

PEO:CsClO4 solid polymer electrolyte-gated 2H-MoTe2 field-effect transistor (FET)

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • molybdenum(IV) telluride
  • B-doped Si
Product

PEO:CsClO4 solid polymer electrolyte-gated 2H-MoTe2 field-effect transistor (FET)

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • molybdenum(IV) telluride
  • B-doped Si
Product

PEO:CsClO4 solid polymer electrolyte-gated 2H-MoTe2 field-effect transistor (FET)

Size: not specified

Medium/Support: none

References

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