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bottom-gate black phosphorus-based field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

polyimide

PI
Type Polymer
Formula
Role substrate
2

Ti/Pd film

Type Nano Material
Formula
Role bottom gate
3

aluminium oxide film

blocking oxide layer Al2O3 layer Al2O3 film BO layer
Type Nano Material
Formula
Role gate dielectrics
4

Ti/Au film

Type Nano Material
Formula
Role source
5

Ti/Au film

Type Nano Material
Formula
Role drain
6

black phosphorus

phosphorene BP
Type Nano Material
Formula
Role semiconductor layer
7

methyl methacrylate resin

methyl methacrylate resin PMMA
Type Polymer
Formula
Role electron beam resist
8

aluminium oxide film

blocking oxide layer Al2O3 layer Al2O3 film BO layer
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
field-effect transistor mobility

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • polyimide
Product

bottom-gate black phosphorus-based field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • polyimide
Product

bottom-gate black phosphorus-based field-effect transistor

Size: not specified

Medium/Support: none

References

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