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Pd/Ta2O5-x/TaOy/Pd bilayer memristor device

Based on

1 Articles
2014 Most recent source

Composition

1

palladium

Type Single Compound
Formula Pd
Role bottom electrode
2

oxygen deficient tantalum oxide

tantalum suboxide tantalum oxide TaO2-x TaOx TaOy TaOx
Type Single Compound
Formula TaO(x)
Role base layer
3

Ta2O5-x film

Type Nano Material
Formula
Role resistive switching layer
4

palladium

Type Single Compound
Formula Pd
Role top electrode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
activation energy of electrical transport dependent on resistance state

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Applications

Area Application Nanomaterial Variant Source
data storage

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • palladium
  1. pBOrYT1tddajCzv6hETrjWNVeJwRB3BHgO9C7
Product

Pd/Ta2O5-x/TaOy/Pd bilayer memristor device

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • palladium
  1. DTDn8vAzdKTIVLs8DG7kojvStV8QzEJI1yGXN
Product

Pd/Ta2O5-x/TaOy/Pd bilayer memristor device

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • palladium
  1. jWUywwUqKGvGTn0oCJOwsvZr3xNmvU3U8EwgQ
Product

Pd/Ta2O5-x/TaOy/Pd bilayer memristor device

Size: not specified

Medium/Support: none

References

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