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dual-gated graphene field effect transistor with oxidized titanium as gate dielectric

Based on

1 Articles
2014 Most recent source

Composition

1

highly doped n-type silicon

Si n++
Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
3

graphene nanosheets

graphene sheets graphene
Type Nano Material
Formula
Role active layer
4

nickel

Type Single Compound
Formula Ni
Role source
5

nickel

Type Single Compound
Formula Ni
Role drain
6

oxygen deficient titanium(IV) oxide

substoichiometric titanium oxide oxygen deficient titanium oxide oxygen-deficient titanium oxide substoichiometric titanate oxygen-deficient titania reduced titanium oxide oxygen vacancy titania oxygen-rich titania titanium sub-oxide titanium suboxide oxidized titanium reduced titania titanium oxide titanate titania
Type Single Compound
Formula TiO(x)
Role gate dielectrics
7

nickel

Type Single Compound
Formula Ni
Role upper gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band energy diagram

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • oxygen
  • highly doped n-type silicon
Product

dual-gated graphene field effect transistor with oxidized titanium as gate dielectric

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • highly doped n-type silicon
  • oxygen
Product

dual-gated graphene field effect transistor with oxidized titanium as gate dielectric

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • oxygen
  • highly doped n-type silicon
Product

dual-gated graphene field effect transistor with oxidized titanium as gate dielectric

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • highly doped n-type silicon
  • oxygen
Product

dual-gated graphene field effect transistor with oxidized titanium as gate dielectric

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • highly doped n-type silicon
  • oxygen
Product

dual-gated graphene field effect transistor with oxidized titanium as gate dielectric

Size: not specified

Medium/Support: none

References

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