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InOx thin-film transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
2

indium oxide

Type Single Compound
Formula InO(x)
Role semiconductor layer
3

aluminium

aluminum
Type Single Compound
Formula Al
Role source
4

aluminium

aluminum
Type Single Compound
Formula Al
Role drain
5

B-doped Si

p-Si
Type Complex Compound
Formula
Role substrate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on annealing temperature

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • B-doped Si
Product

InOx thin-film transistor

Size: not specified

Medium/Support: none

References

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