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ionic liquid-gated WS2 field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

Si/SiO2

Type Complex Compound
Formula
Role substrate
2

titanium

Type Single Compound
Formula Ti
Role adhesion layer
3

gold

Type Single Compound
Formula Au
Role electrodes
4

WS2 flake

Type
Formula
Role
5

N,N-diethyl-N-methyl-N-(2-methoxyethyl) ammonium bis(trifluoromethanesulfonyl) imide

N,N-diethyl-N-methyl-N-(2- methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide N,N-diethyl-N-methyl-N-(2-methoxyethyl)-ammonium bis-(trifluoromethylsulfonyl)imide N, N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis(trifluoromethylsulfonyl)imide N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis(trifluoromethylsulphonyl)imide N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis-(trifluoromethylsulfonyl)imide N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis-(trifluoromethylsulfonylimide) N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis-trifluoromethylsulfonyl)-imide N,N-diethyl-N-methyl-N-(2-methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis(trifluoromethylsulfonyl)imide N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis-trifluoromethylsulfonyl)imide N,N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis-trifluoromethylsulfonyl-imide N,N-diethyl-N-methyl-N-(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide N-diethyl-N-(2-methoxyethyl)-N-methylammonium bis-(trifluoromethylsulfonyl)-imide N,N-Diethyl-2-methoxy-N-methylethanaminium bis[(trifluoromethyl)sulfonyl]azanide N,N-diethyl-2-methoxy-N-methylethanaminium bis[(trifluoromethyl)sulfonyl]azanide N,N-diethyl-N-(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide diethylmethyl(2-methoxyethyl) ammonium bis(trifluoromethylsulfonyl)imide diethylmethyl(2-methoxyethyl)ammonium bis(trifluoromethylsulfonyl)imide [DEME]-[TFSI] [deme][Tf2N] DEME-TFSI
Type
Formula C10H20F6N2O5S2
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • tungsten(IV) sulfide
  • Si/SiO2
Product

ionic liquid-gated WS2 field-effect transistor

Size: not specified

Medium/Support: none

References

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