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top-contact/bottom-gate organic thin-film transistor

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

PMMA/SiO2/p-doped Si

Type Complex Compound
Formula
Role substrate
2

DFH-T-2,2'Tz4-T

Type Single Compound
Formula C32H8F26N4S6
Role semiconductor layer
3

gold

Type Single Compound
Formula Au
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current on-off ratio dependent on deposition temperature

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • PMMA/SiO2/p-doped Si
  • DFH-T-2,2'Tz4-T
  1. 0q9gk64hLqpHLarYpcjlxwxjr9kdiLcxEwl1rEvAnZ
  2. 8seFe
Product

top-contact/bottom-gate organic thin-film transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • PMMA/SiO2/p-doped Si
  • DFH-T-2,2'Tz4-T
  1. fb6y5VO5Q03JLtaaMLkqysvNMfP81UXzgTNEo4K4O2
  2. FtyhJ
Product

top-contact/bottom-gate organic thin-film transistor

Size: not specified

Medium/Support: none

References

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