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field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

n-doped silicon

n-Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

poly(dimethylsiloxane)

polydimethylsiloxane PDMS
Type Polymer
Formula
Role dielectric layer
4

chromium

Type Single Compound
Formula Cr
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role drain
6

gold

Type Single Compound
Formula Au
Role source
7

poly(3-hexylthiophene)

P3HT
Type Polymer
Formula
Role active layer
8

poly(dimethylsiloxane)

polydimethylsiloxane PDMS
Type Polymer
Formula
Role substrate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility dependent on strain-level

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • poly(dimethylsiloxane)
  • Si wafer
Product

field-effect transistor

Size: not specified

Medium/Support: none

References

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