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all-solid-state electric double layer transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role substrate
2

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role gate
3

mesoporous silica thin film

mesoporous SiO2 thin film
Type
Formula
Role
4

tantalum pentoxide

tantalum(V) oxide tantalum oxide
Type Single Compound
Formula O5Ta2
Role interface layer
5

platinum

Type Single Compound
Formula Pt
Role drain
6

platinum

Type Single Compound
Formula Pt
Role source
7

graphene oxide

GO
Type Nano Material
Formula
Role channels

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • tin-doped indium oxide
Product

all-solid-state electric double layer transistor

Size: not specified

Medium/Support: none

References

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