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field effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

n-doped silicon

n-doped Si n++ Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

poly(divinyltetramethyldisiloxane bis(benzocyclobutene))

poly(BCB)
Type
Formula
Role
4

fulleropyrollidinium iodide film

Type Nano Material
Formula
Role semiconductor layer
5

silver

Type Single Compound
Formula Ag
Role source
6

silver

Type Single Compound
Formula Ag
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • divinyltetramethyldisiloxane bis(benzocyclobutene) monomer
  • Si/SiO2
  1. bhQ0xrG
Product

field effect transistor

Size: not specified

Medium/Support: none

References

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