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nanodevice based on (few-layer graphene sheets/few-layer graphene sheets/hexagonal boron nitride/hexagonal boron nitride/tungsten(IV) sulfide/tungsten(IV) sulfide/silicon dioxide/silicon dioxide/n-type Si/n-type Si)

Based on

1 Patents
2015 Most recent source

Composition

1

n-type Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

few-layer graphene sheets

graphene
Type Nano Material
Formula
Role electrodes
4

hexagonal boron nitride

h-BN hBN
Type
Formula BN
Role
5

tungsten(IV) sulfide

tungsten disulfide tungsten sulfide
Type
Formula WS2
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current dependent on gate voltage

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Applications

Area Application Nanomaterial Variant Source
power generation

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • graphite
  1. DIsXbpm668SgO
Product

nanodevice based on (few-layer graphene sheets/few-layer graphene sheets/hexagonal boron nitride/hexagonal boron nitride/tungsten(IV) sulfide/tungsten(IV) sulfide/silicon dioxide/silicon dioxide/n-type Si/n-type Si)

Size: not specified

Medium/Support: none

References

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