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bottom-gated C60 FET

Based on

1 Articles
2015 Most recent source

Composition

1

cellophane material

Type Complex Compound
Formula
Role substrate
2

aluminium

aluminum
Type Single Compound
Formula Al
Role gate
3

poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane)

pV3D3
Type Polymer
Formula
Role gate dielectrics
4

example of optionally substituted fullerene

polycrystalline fullerite C60 C60 fullerene particles fullerene nanoparticles (C60-Ih)[5,6]fullerene (C60-Ih)[5,6]fullerene buckminsterfullerene example of fullerene fullerene-C60 anion fullerene molecule C60 nanoparticles fullerene layer C60 fullerenes C60 buckyballs C60 fullerenes C60 fullerene fullerene-C60 [60]fullerene C60 fullerene C60-fullerene Ceo fullerene fullerene C60 fullerene C60 fullerene-C60 fullerene[60] C60 molecule C60 molecule fullerenes C60 peapod fullerene buckyball C60 anion C60- C60 C60
Type Nano Material
Formula
Role channel layer
5

calcium

Type Single Compound
Formula Ca
Role source electrode
6

aluminium

aluminum
Type Single Compound
Formula Al
Role drain electrode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
capacitance density

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • aluminium
  • cellophane material
  1. mWbCbB8hq0R3muu
  2. N3UaJXk1lYL
Product

bottom-gated C60 FET

Size: not specified

Medium/Support: none

References

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