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graphene based tunneling transistor

Based on

1 Articles
2014 Most recent source

Composition

1

doped n-silicon

doped n-Si
Type Complex Compound
Formula
Role gate
2

silicon-rich silicon oxide

SRSO SiOx
Type Single Compound
Formula SiO(x)
Role barrier
3

hexagonal boron nitride

h-BN hBN
Type Single Compound
Formula BN
Role substrate
4

single-layer graphene sheets

monolayer graphene flakes single-layer graphene single layer graphene carbon nanoparticles graphene nano-flakes graphene nano-sheets graphene nanosheets graphene nanoflakes monolayer graphene graphene nanoflake carbon nanoflakes graphene flakes carbon powder graphene CNF GNF GF Gr GR
Type Nano Material
Formula
Role electrodes
5

hexagonal boron nitride

h-BN hBN
Type Single Compound
Formula BN
Role tunneling barriers

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
conductance dependent on inductance presence

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
Raman spectroscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • hexagonal boron nitride
  • doped n-silicon
  • silicon-rich silicon oxide
See all (4)
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  2. M4WUOqJ7nC79SJNVHyVSWF7Y
Product

graphene based tunneling transistor

Size: not specified

Medium/Support: none

References

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