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indium-zinc oxide thin film transistor

Based on

1 Articles
2015 Most recent source

Composition

1

p-doped silicon

p-type silicon p-type Si silicon
Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

indium zinc oxide

IZO
Type Complex Compound
Formula
Role channels
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role drain
6

gold

Type Single Compound
Formula Au
Role source

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current on-off ratio dependent on number of devices

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gold
  • Si wafer
  • titanium
Product

indium-zinc oxide thin film transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • gold
  • Si wafer
  • titanium
Product

indium-zinc oxide thin film transistor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • gold
  • Si wafer
  • titanium
Product

indium-zinc oxide thin film transistor

Size: not specified

Medium/Support: none

References

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