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few-layer SnS2 FET

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role back gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role back-gate dielectrics
3

multilayer metal dichalcogenide semiconductor material

multilayer SnS2 flake
Type Nano Material
Formula
Role channel layer
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role drain
6

gold

Type Single Compound
Formula Au
Role source
7

poly(methyl methacrylate)

methyl methacrylate resin PMMA
Type Polymer
Formula
Role insulating layer
8

deionized water

DI water
Type Single Compound
Formula H2O
Role top gate dielectric

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
back-gate voltage

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Applications

Area Application Nanomaterial Variant Source
diagnostics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • tin(IV) sulfide
Product

few-layer SnS2 FET

Size: not specified

Medium/Support: none

References

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