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field-effect transistor with boron nitride-encapsulated graphene

Based on

1 Articles
2015 Most recent source

Composition

1

SiO2/Si

Type Complex Compound
Formula
Role substrate
2

boron nitride/graphene monolayer/boron nitride film

BN (60 min)/graphene monolayer/h-BN film BN/graphene monolayer/h-BN film BGB film
Type Nano Material
Formula
Role channels
3

titanium

Type Single Compound
Formula Ti
Role adhesion layer
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier density dependent on aging

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
  1. b3gDuiHhCmTQS1H9q8YW
  2. 5NZcB1f63
Product

field-effect transistor with boron nitride-encapsulated graphene

Size: not specified

Medium/Support: none

References

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