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MoS2-based field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

Si/SiO2

Type Complex Compound
Formula
Role substrate
2

titanium

Type Single Compound
Formula Ti
Role adhesion layer
3

titanium

Type Single Compound
Formula Ti
Role bottom gate
4

lead(II) zirconium(IV) titanium(IV) oxide

lead zirconate titanate lead zirconium titanate Lead zirconate titanate lead-zirconate-titanate PZT 52/48 PZT
Type Single Compound
Formula Pb(Zr0.52Ti0.48)O3
Role gate dielectrics
5

molybdenum(IV) sulfide

molybdenum disulphide molybdenum disulfide molybdenum sulfide
Type Single Compound
Formula MoS2
Role semiconductor layer
6

titanium

Type Single Compound
Formula Ti
Role adhesion layer
7

gold

Type Single Compound
Formula Au
Role source
8

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
capacitance per area

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  1. zbTHZ9lpqMTG6NSjkdkntH5GJt53INx
Product

MoS2-based field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  1. 2tijiXAVtHF2yH4BOqzQdFRXkesXK5O
Product

MoS2-based field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • molybdenum(IV) sulfide
  1. GcxhXiu2pgySxbpGVZg7vUT46sWPMQd
Product

MoS2-based field-effect transistor

Size: not specified

Medium/Support: none

References

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