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CQD-ZnO thin-film transistor

Based on

1 Articles
2015 Most recent source

Composition

1

heavily doped p-type Si

P+-Si
Type Complex Compound
Formula
Role gate
2

substoichiometric zirconium oxide

zirconium oxide zirconia ZrOx
Type Single Compound
Formula ZrO(x)
Role gate dielectrics
3

GQD doped ZnO thin film

GQD-ZnO film
Type Nano Material
Formula
Role channels
4

aluminium

aluminum
Type Single Compound
Formula Al
Role source
5

aluminium

aluminum
Type Single Compound
Formula Al
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on gate voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • graphite
  • zinc oxide
  1. BJCWjq
Product

CQD-ZnO thin-film transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • graphite
  • zinc oxide
  1. cZfUZ6
Product

CQD-ZnO thin-film transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • graphite
  • zinc oxide
  1. 9nPOqq
Product

CQD-ZnO thin-film transistor

Size: not specified

Medium/Support: none

References

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