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intermediate sized quasi ballistic semiconducting multiwalled carbon nanotube transistor

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

multiwalled carbon nanotube

MWCNT
Type Nano Material
Formula
Role conducting channel
4

palladium

Type Single Compound
Formula Pd
Role source
5

palladium

Type Single Compound
Formula Pd
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge noise parameter

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. TZq7bvSrIWyRKQcbFMt2yiAXEmU
Product

intermediate sized quasi ballistic semiconducting multiwalled carbon nanotube transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  1. ZtqcUkhZmZRA280r9rULOObeQy6
Product

intermediate sized quasi ballistic semiconducting multiwalled carbon nanotube transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  1. aNMZ1JwVqWLUVIJsnMvYYJgTtgM
Product

intermediate sized quasi ballistic semiconducting multiwalled carbon nanotube transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  1. BsaE42waKiD5hWCbeQy01eQ9WXe
Product

intermediate sized quasi ballistic semiconducting multiwalled carbon nanotube transistor

Size: not specified

Medium/Support: none

References

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