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resistive switching device with nitrogen-doped carbon thin film as switching medium

Based on

1 Articles
2014 Most recent source

Composition

1

SiO2/Si

Type Complex Compound
Formula
Role substrate
2

titanium

Type Single Compound
Formula Ti
Role adhesion layer
3

platinum

Type Single Compound
Formula Pt
Role electrodes
4

nitrogen-doped carbon thin film

CN0.25 thin film
Type Nano Material
Formula
Role switch
5

copper

Type Single Compound
Formula Cu
Role electrodes
6

gold

Type Single Compound
Formula Au
Role protective layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current dependent on metal forming

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Applications

Area Application Nanomaterial Variant Source
data storage

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
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  2. j8QLi8lB9IS37ZDgxGB
Product

resistive switching device with nitrogen-doped carbon thin film as switching medium

Size: not specified

Medium/Support: none

References

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