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P(NDI2OD-T2)-based organic field effect transistor with carbon electrodes

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role substrate
3

graphitic carbon microstructure

Type Nano Material
Formula
Role source
4

graphitic carbon microstructure

Type Nano Material
Formula
Role drain
5

poly{[N,N-9-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)}

ActivInkTM N2200 P(NDI2OD-T2)
Type Polymer
Formula
Role semiconductor layer
6

poly(methyl methacrylate)

methyl methacrylate resin PMMA
Type Polymer
Formula
Role gate dielectrics
7

aluminium

aluminum
Type Single Compound
Formula Al
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • polyacrylonitrile
  • Si/SiO2
  1. 8Vv9F8DwsufU
Product

P(NDI2OD-T2)-based organic field effect transistor with carbon electrodes

Size: not specified

Medium/Support: none

References

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