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InAlGaAs/GaAs-capped InAs quantum dot infrared photodetector

Based on

1 Articles
2014 Most recent source

Composition

1

semi-insulating GaAs

SI GaAs
Type Single Compound
Formula GaAs
Role substrate
2

gallium arsenide

Type
Formula GaAs
Role
3

n+-type gallium(III) arsenide

n+GaAs
Type
Formula
Role
4

gallium arsenide

Type
Formula GaAs
Role
5

gallium arsenide

Type
Formula GaAs
Role
6

example of semiconductor nanoparticles

example of semiconductor quantum dots indium(III) arsenide quantum dots indium monoarsenide quantum dots indium arsenide quantum dots example of quantum dots InAs quantum dots InAs quantum dot example of QD InAs QD layer InAs QD
Type
Formula
Role
7

In0.21Al0.21Ga0.58As

InAlGaAs alloy
Type Single Compound
Formula In0.21Al0.21Ga0.58As
Role capping layer
8

gallium arsenide

Type Single Compound
Formula GaAs
Role capping layer
9

gallium arsenide

Type Single Compound
Formula GaAs
Role capping layer
10

n+-type gallium(III) arsenide

n+GaAs
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current density

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Applications

Area Application Nanomaterial Variant Source
photonics

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Characterization

Method Nanomaterial Variant Source
photoluminescence

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
See all (4)
  1. 27NSGFp7lGq3789xlO64qp
  2. IHOBW6
  3. 3ilUNoTMNTSWOIvgzU03
Product

InAlGaAs/GaAs-capped InAs quantum dot infrared photodetector

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
See all (4)
  1. 8c5CoGNycmC4ZBVoUEkq4i
  2. tIPwBn
  3. lt5Dk8j20pjxaz2geB2m
Product

InAlGaAs/GaAs-capped InAs quantum dot infrared photodetector

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
See all (4)
  1. WHMfK76DTQD9DXLFL0RR2z
  2. O9KYK6
  3. tT85cO4V6B9NcADH71Sz
Product

InAlGaAs/GaAs-capped InAs quantum dot infrared photodetector

Size: not specified

Medium/Support: none

References

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