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Ag/ZnMn2O4/p+-Si memory device

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

p+-doped silicon

p+-doped Si
Type Complex Compound
Formula
Role substrate
2

zinc manganese oxide film

Type Nano Material
Formula
Role active layer
3

silver

Type Single Compound
Formula Ag
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
cumulative probability

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Applications

Area Application Nanomaterial Variant Source
data storage

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • manganese(II) acetate tetrahydrate
  • zinc acetate dihydrate
  1. 88LOxBu9jdvPFtQtA2sHT5Iup3f
  2. yBOVuIeGoMr45kzvosDlMuN6Jzir
Product

Ag/ZnMn2O4/p+-Si memory device

Size: not specified

Medium/Support: none

References

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