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all-graphene field effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

p-doped silicon

p-doped Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

multi-layer graphene sheets

multilayer graphene sheets five-layer thick graphene five-layered graphene multi-layer graphene multilayer graphene five layer graphene five-layer graphene pentalayer graphene few-layer graphene few layer graphene 5-layer graphene graphene sheets graphene 5L Gr FLG 5LG
Type Nano Material
Formula
Role source
4

multi-layer graphene sheets

multilayer graphene sheets five-layer thick graphene five-layered graphene multi-layer graphene multilayer graphene five layer graphene five-layer graphene pentalayer graphene few-layer graphene few layer graphene 5-layer graphene graphene sheets graphene 5L Gr FLG 5LG
Type Nano Material
Formula
Role drain
5

double-layer graphene systems

double-layer graphene sheets multi-layer graphene sheets bilayer graphene supercell multilayer graphene sheets bilayer graphene sheets double-layered graphene bilayer graphene film double layer graphene double-layer graphene multi-layer graphene two-layered graphene multilayer graphene bi-layered graphene few-layer graphene bilayered graphene bi-layer graphene graphene bilayers 2-layer graphene bilayer graphene graphene bilayer graphene sheets graphene flakes 2L graphene BL graphene bilayer GF graphene BLG film 2L Gr 2LG BLG DLG GF BG
Type Nano Material
Formula
Role channels

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
channel contact resistance dependent on gate voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • highly oriented pyrolytic graphite
  1. jt5ePlL58ni
Product

all-graphene field effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • highly oriented pyrolytic graphite
  1. vI78QEQpHiC
Product

all-graphene field effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • highly oriented pyrolytic graphite
  1. ZqRXn44ACqa
Product

all-graphene field effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
  • highly oriented pyrolytic graphite
  1. BNWz0edZ9t8
Product

all-graphene field effect transistor

Size: not specified

Medium/Support: none

Method 5

Type: Physical formation
Source:
Starting materials
  • highly oriented pyrolytic graphite
  1. fYvvgehi7Jm
Product

all-graphene field effect transistor

Size: not specified

Medium/Support: none

References

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