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gallium arsenide metal oxide semiconductor capacitor

Based on

1 Articles
2014 Most recent source

Composition

1

p-type gallium arsenide wafers

p-type GaAs
Type Complex Compound
Formula
Role substrate
2

sulphur

sulfur
Type Single Compound
Formula S
Role layer
3

amorphous aluminium oxide

amorphous aluminum oxide aluminium(III) oxide amorphous alumina aluminium oxide amorphous Al2O3 aluminum oxide a-Al2O3 alumina
Type Single Compound
Formula Al2O3
Role dielectric layer
4

amorphous titanium(IV) oxide

amorphous titanium dioxide amorphous titania a-titania a-TiO2
Type Single Compound
Formula TiO2
Role dielectric layer
5

glue

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
capacitance dependent on frequency

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
high-resolution transmission electron microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • zinc-doped p-type gallium arsenide wafers
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Product

gallium arsenide metal oxide semiconductor capacitor

Size: not specified

Medium/Support: none

References

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