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InGaAs-based field-effect transistor

Based on

1 Patents
2013 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

amorphous aluminium oxide

amorphous aluminum oxide aluminium(III) oxide amorphous alumina aluminium oxide amorphous Al2O3 aluminum oxide alumina a-Al2O3
Type Single Compound
Formula Al2O3
Role burning oxide layer
3

indium gallium arsenide

gallium-indium arsenide In0.53Ga0.47As
Type Single Compound
Formula In0.53Ga0.47As
Role semiconductor layer
4

Ni-InGaAs alloy

Type Complex Compound
Formula
Role source/drain
5

amorphous aluminium oxide

amorphous aluminum oxide aluminium(III) oxide amorphous alumina aluminium oxide amorphous Al2O3 aluminum oxide alumina a-Al2O3
Type Single Compound
Formula Al2O3
Role gate dielectrics
6

tantalum

Type Single Compound
Formula Ta
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain-induced barrier lowering

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Applications

Area Application Nanomaterial Variant Source
electronics

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References

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