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thin-film randomized SWCNTs network back-gated transistor

Based on

1 Articles
2014 Most recent source

Composition

1

n-type silicon

n-Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

(3-aminopropyl)-triethoxysilane moiety

(3-aminopropyl)trimethoxysilane moiety (3-aminopropyl)triethoxysilane moiety γ-aminopropyltriethoxy silane moiety 3-aminopropyltrimethoxysilane moiety 3-aminopropyltriethoxysilane moiety γ-aminopropyltriethoxysilane moiety (3-aminopropyl)trioxysilane moiety (3-aminopropyl)silanetrioxy group 3-aminopropylsilanetrioxy group 3-aminopropylsiloxy fragment 3-aminopropyl silane moiety 3-aminopropylsilane moiety γ-APTES moiety 3-APTS moiety APTES moiety APTMS moiety AMPS moiety APTS moiety APS moiety
Type
Formula -C3H8NO3Si-
Role
4

single walled carbon nanotubes

single walled carbon nanotubes single-wall carbon nanotubes SWCNT SWNT
Type Nano Material
Formula
Role channels
5

gold

Type Single Compound
Formula Au
Role source
6

titanium

Type Single Compound
Formula Ti
Role source
7

gold

Type Single Compound
Formula Au
Role drain
8

titanium

Type Single Compound
Formula Ti
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • oxygen
  1. 6veuYNf
Product

thin-film randomized SWCNTs network back-gated transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • oxygen
  1. RBBa2Ss
Product

thin-film randomized SWCNTs network back-gated transistor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • oxygen
  1. oxumsvF
Product

thin-film randomized SWCNTs network back-gated transistor

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • oxygen
  1. PSFmUt8
Product

thin-film randomized SWCNTs network back-gated transistor

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • silicon
  • oxygen
  1. jDb3w5F
Product

thin-film randomized SWCNTs network back-gated transistor

Size: not specified

Medium/Support: none

References

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