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InP nanowire field effect transistor

Based on

1 Articles
2012 Most recent source

Composition

1

degenerately doped silicon

Type
Formula
Role
2

100 nm thick SiO2 substrate

100 nm-thick silica layer silicon oxide nanolayer 100 nm thick SiO2 layer 100-nm-thick SiO2 layer silicon dioxide film SiO2 insulator layer silicon oxide layer silica nanofilm SiO2 nanofilm silica layer silica film SiO2 layer SiO2 layer SiO2 film
Type
Formula
Role
3

hafnium oxide film

hafnia thin film HfO2 thin film hafnia film HfO2 layer HfO2 film
Type
Formula
Role
4

H2S-doped InP nanowires

H2S-doped InP NW
Type
Formula
Role
5

ammonium polysulfide

ammonium sulfide
Type
Formula NH4S(x)
Role
6

10 nm thick titanium layer

10 nm-thick titanium layer titanium layer titanium film Ti electrode Ti layer Ti film
Type
Formula
Role
7

Pd layer

Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
activation energy

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

InP nanowire field effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
Product

InP nanowire field effect transistor

Size: not specified

Medium/Support: none

References

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