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Au/Co3O4/ITO resistive random access memory cell

Based on

1 Articles
2013 Most recent source

Composition

1

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role working electrode
2

Co3O4 nanosheets

Type
Formula
Role
3

gold

Type Single Compound
Formula Au
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility

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Applications

Area Application Nanomaterial Variant Source
data storage

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • cobalt(II) nitrate hexahydrate
  • tin-doped indium oxide
  • water
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  2. gRXpoD
  3. NTDNk
Product

Au/Co3O4/ITO resistive random access memory cell

Size: not specified

Medium/Support: none

References

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