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silicon-based Schottky barrier field effect transistor

Based on

1 Articles
2013 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

silicidized silicon nanowire

Type
Formula
Role
4

nickel

Type Single Compound
Formula Ni
Role source
5

nickel

Type Single Compound
Formula Ni
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. fUO0RRz4Jl3VGlYi1nwmx6daSBZLQoZ505rxMsF2SpVkll8xtGc31jNVD
  2. aISnBWD
  3. F4Ddp0
  4. EOsn47PyK3mQV
  5. R7mb1h
Product

silicon-based Schottky barrier field effect transistor

Size: not specified

Medium/Support: none

References

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