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individual p-type semiconducting CNT-FET

Based on

2 Articles
2013 Most recent source

Composition

1

P-doped silicon

n-Si
Type
Formula
Role
2

boron-doped c-Si

Type
Formula
Role
3

hydrogenated amorphous silicon

a-Si:H
Type
Formula
Role
4

aluminium

aluminum
Type
Formula Al
Role
5

tin-doped indium oxide

indium tin oxide ITO
Type
Formula
Role
6

aluminium

aluminum
Type
Formula Al
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current density

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
high-resolution transmission electron microscopy

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • boron-doped c-Si
  • aluminium
Product

individual p-type semiconducting CNT-FET

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • boron-doped c-Si
  • aluminium
Product

individual p-type semiconducting CNT-FET

Size: not specified

Medium/Support: none

References

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