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InGaN single quantum well laser diode

Based on

1 Articles
2012 Most recent source

Composition

1

n-type GaN

Type
Formula
Role
2

n-type indium gallium nitride

n-type InGaN
Type Complex Compound
Formula
Role compliance layer
3

n-type AlInGaN

Type Complex Compound
Formula
Role cladding layer
4

n-type GaN

Type Complex Compound
Formula
Role waveguide layer
5

InGaN single quantum well

InGaN SQW
Type Nano Material
Formula
Role active region
6

p-type Al0.2Ga0.8N

Type Complex Compound
Formula
Role hole transport layer
7

p-type GaN

Type Complex Compound
Formula
Role waveguide layer
8

p-type AlInGaN

Type Complex Compound
Formula
Role cladding layer
9

p-type GaN

Type Complex Compound
Formula
Role contacting layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band gap

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Applications

Area Application Nanomaterial Variant Source
lasers

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References

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