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bottom-contact thin-film transistor

Based on

1 Articles
2011 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

titanium-gold layer

titanium/gold film titanium/gold Ti/Au film Ti/Au
Type Nano Material
Formula
Role source
4

titanium-gold layer

titanium/gold film titanium/gold Ti/Au film Ti/Au
Type Nano Material
Formula
Role drain
5

poly[(4,8-bis(1-ethylhexyloxy)benzo[1,2-b:4,5-b']dithiophene-2,6-diyl-alt-2,1,3-benzothiadiazole-4,7-diyl]

Type Polymer
Formula
Role transport layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. OpAe45FxcWBHTUiyflKE0gCOxDQh3LpGzDc7fIRxh98fI
Product

bottom-contact thin-film transistor

Size: not specified

Medium/Support: none

References

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