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Ti/p-GaN Schottky diode

Based on

1 Articles
2013 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

gallium nitride

Type
Formula GaN
Role
3

unintentionally-doped gallium nitride

Type
Formula
Role
4

magnesium-doped gallium nitride

p-doped gallium nitride Mg-doped GaN p-doped GaN
Type Complex Compound
Formula
Role p-type semiconducting layer
5

titanium

Type Single Compound
Formula Ti
Role Schottky gate
6

nickel

Type Single Compound
Formula Ni
Role adhesion layer
7

gold

Type Single Compound
Formula Au
Role Ohmic contacts

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
characteristic temperature

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

Ti/p-GaN Schottky diode

Size: not specified

Medium/Support: none

References

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