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bottom-gate-type flexible transparent thin-film transistor

Based on

1 Articles
2014 Most recent source

Composition

1

poly(ethylene terephthalate)

polyethylene terephthalate polyester PETE PET
Type Polymer
Formula
Role substrate
2

Si-rich silicon nitride

silicon-rich nitride silicon nitride Si-rich nitride a-SiNx SRN
Type Single Compound
Formula SiN(x)
Role barrier layer
3

aluminium

aluminum
Type Single Compound
Formula Al
Role bottom gate
4

Si-rich silicon nitride

silicon-rich nitride silicon nitride Si-rich nitride a-SiNx SRN
Type Single Compound
Formula SiN(x)
Role gate insulator layer
5

In2Ga2.3ZnO7.5

Type Single Compound
Formula In2Ga2.3ZnO7.5
Role channel layer
6

aluminium

aluminum
Type Single Compound
Formula Al
Role source
7

aluminium

aluminum
Type Single Compound
Formula Al
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
effective field-effect mobility

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • poly(ethylene terephthalate)
  • Si-rich silicon nitride
Product

bottom-gate-type flexible transparent thin-film transistor

Size: not specified

Medium/Support: none

References

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