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Sc-contacted top-gated n-type carbon nanotube transistor with passivation layer

Based on

1 Articles
2013 Most recent source

Composition

1

n-doped silicon

n-type silicon N-type silicon n-doped Si silicon
Type
Formula Si
Role
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

single walled carbon nanotubes

single-walled carbon nanotubes single-wall carbon nanotubes SWCNT SWNT
Type
Formula
Role
4

scandium

Type Single Compound
Formula Sc
Role source
5

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role gate insulator
6

palladium

Type Single Compound
Formula Pd
Role gate
7

palladium

Type
Formula Pd
Role
8

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role passivation layer
9

scandium

Type Single Compound
Formula Sc
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain-source current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

Sc-contacted top-gated n-type carbon nanotube transistor with passivation layer

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
Product

Sc-contacted top-gated n-type carbon nanotube transistor with passivation layer

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
Product

Sc-contacted top-gated n-type carbon nanotube transistor with passivation layer

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
Product

Sc-contacted top-gated n-type carbon nanotube transistor with passivation layer

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
Product

Sc-contacted top-gated n-type carbon nanotube transistor with passivation layer

Size: not specified

Medium/Support: none

References

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