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staggered-gate organic field-effect transistor

Based on

1 Articles
2013 Most recent source

Composition

1

highly doped silicon

highly doped Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

poly(3-hexylthiophene)

P3HT
Type
Formula
Role
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • highly doped silicon
Product

staggered-gate organic field-effect transistor

Size: not specified

Medium/Support: none

References

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