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arc-discharge single-wall carbon nanotubes-based back-gated SN-TFT

Based on

1 Articles
2013 Most recent source

Composition

1

heavily p-doped Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

titanium

Type Single Compound
Formula Ti
Role adhesion layer
4

palladium

Type Single Compound
Formula Pd
Role source
5

3-aminopropyltriethoxysilane

APTES
Type Single Compound
Formula C9H23NO3Si
Role adhesion layer
6

CoMoCAT single-wall carbon nanotubes

CoMoCAT SWNT
Type Nano Material
Formula
Role semiconductor layer
7

titanium

Type Single Compound
Formula Ti
Role adhesion layer
8

palladium

Type Single Compound
Formula Pd
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
average on/off ratio

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

arc-discharge single-wall carbon nanotubes-based back-gated SN-TFT

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Product

arc-discharge single-wall carbon nanotubes-based back-gated SN-TFT

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Product

arc-discharge single-wall carbon nanotubes-based back-gated SN-TFT

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
Product

arc-discharge single-wall carbon nanotubes-based back-gated SN-TFT

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
Product

arc-discharge single-wall carbon nanotubes-based back-gated SN-TFT

Size: not specified

Medium/Support: none

References

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