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Pt/3C-SiC Schottky diode

Based on

1 Articles
2011 Most recent source

Composition

1

cubic silicon carbide

silicon carbide moissanite-3C carborundum moissanite 3C-SiC
Type
Formula SiC
Role
2

n-doped silicon carbide

Type
Formula
Role
3

dinickel silicide

Ni-rich silicide nickel silicide
Type
Formula Ni2Si
Role
4

platinum

Type
Formula Pt
Role
5

nickel

Type
Formula Ni
Role
6

platinum silicide layer

Pt2Si layer
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current plot

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • n-doped silicon carbide
  • cubic silicon carbide
  1. xu0HEf7kQmxtTk4dP8YGFoBlIBxNvyfsL5x0BjFEmSp0hZPzvjZZ6dkS36uHzxlg7Dv44nabdCvPFBDwETkNklDbvkfZKIgKzuNOo7OqMuTw4oDvWUeZaFKoSKVMX1vbV4HLmUBfIMB0iXN8
Product

Pt/3C-SiC Schottky diode

Size: not specified

Medium/Support: none

References

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