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transparent non-volatile memory device

Based on

1 Articles
2013 Most recent source

Composition

1

indium tin oxide glass

ITO coated glass ITO glass
Type Complex Compound
Formula
Role source
2

indium tin oxide glass

ITO coated glass ITO glass
Type Complex Compound
Formula
Role drain
3

indium tin oxide glass

ITO coated glass ITO glass
Type Complex Compound
Formula
Role gate
4

silicon-rich silicon nitride

Si-reached silicon nitride silicon nitride a-SiNx SRSN
Type Single Compound
Formula SiN(x)
Role gate insulator
5

silicon quantum dots embedded in silicon nitride matrix

silicon quantum dots in silicon nitride film Si QD embedded in silicon nitride matrix
Type Nano Material
Formula
Role gate insulator
6

silicon-rich silicon nitride

Si-reached silicon nitride silicon nitride a-SiNx SRSN
Type Single Compound
Formula SiN(x)
Role gate insulator
7

mixture of substance based on (indium zinc oxide/indium zinc oxide/titanium/titanium/boron/boron)

Type Complex Compound
Formula
Role active layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on sweep width

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Applications

Area Application Nanomaterial Variant Source
electronic paper

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References

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