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n-type resonant tunneling diode

Based on

1 Articles
2011 Most recent source

Composition

1

n+ gallium arsenide

n+ GaAs
Type
Formula
Role
2

Al0.4Ga0.6As layer

Type
Formula
Role
3

GaAs quantum well

GaAs layer GaAs film GaAs QW
Type
Formula
Role
4

InAs self-assembled quantum dots

InAs quantum dots InAs QD layer InAs QD
Type
Formula
Role
5

GaAs layer

Type
Formula
Role
6

n-doped GaAs layer

Type
Formula
Role
7

n-doped gallium arsenide

n-doped GaAs
Type
Formula
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current dependent on dark/light conditions

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • n+ gallium arsenide
  • gallium aluminium arsenide
Product

n-type resonant tunneling diode

Size: not specified

Medium/Support: none

References

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