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Pt/Zr:SiOx/C:SiOx/TiN resistance random access memory device

Based on

1 Articles
2013 Most recent source

Composition

1

titanium nitride

Type Single Compound
Formula TiN
Role electrodes
2

graphene oxide-containing C:SiOx thin film

GO-containing C:SiOx thin film
Type Nano Material
Formula
Role resistive switching layer
3

Zr:SiOx blend

Type Complex Compound
Formula
Role resistive switching layer
4

platinum

Type Single Compound
Formula Pt
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
endurance performance dependent on resistance state

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • titanium nitride
  • glass-like carbon
  1. T4iZE
  2. W0ZRm13zCB
  3. BVhX4US3YXMySJ8p
Product

Pt/Zr:SiOx/C:SiOx/TiN resistance random access memory device

Size: not specified

Medium/Support: none

References

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