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GaN-based high electron mobility transistor

Based on

1 Articles
2014 Most recent source

Composition

Image only illustrates the order and placement of components as described in literature.

1

gallium nitride

Type
Formula GaN
Role
2

aluminium gallium nitride

aluminum gallium nitride Al0.25Ga0.75N AlGaN
Type
Formula Al0.25Ga0.75N
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  1. JEdm13q7TPQMbVs5iheyDpGzdMWStWJTMlAoz
Product

GaN-based high electron mobility transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
Product

GaN-based high electron mobility transistor

Size: not specified

Medium/Support: none

References

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