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resistive random access memory device with HfOx switching material

Based on

1 Articles
2013 Most recent source

Composition

1

SiO2/Si substrate

Type Complex Compound
Formula
Role substrate
2

surface oxidized tungsten layer

tungsten layer W layer
Type Nano Material
Formula
Role bottom electrode
3

hole-patterned SiO2 layer

Type
Formula
Role
4

hafnium sub-oxide

hafnium suboxide hafnium oxide hafnia HfOx
Type Single Compound
Formula HfO(x)
Role switching layer
5

iridium oxide

Type Single Compound
Formula IrO(x)
Role top electrode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current dependent on cycle number

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Applications

Area Application Nanomaterial Variant Source
data storage

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Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

resistive random access memory device with HfOx switching material

Size: not specified

Medium/Support: none

References

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